KSD526Y
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Краткое описание:
NPN BJT Transistor | 80V | 4A | 30W | TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 8MHz. Maximum power dissipation is 30W, with an operating temperature range from -55°C to 150°C. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | KSD526 |
| Weight | 1.8g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 8MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-220-3 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 200 |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Transition Frequency | 8MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 30W |
| Gain Bandwidth Product | 8MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 450mV |
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