KSD880O
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NPN BJT Transistor, 80V, 3A, 3MHz, TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 80V. Offers a DC rated voltage of 60V, a collector-emitter saturation voltage of 400mV, and a transition frequency of 3MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. This RoHS compliant component is lead-free and supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.8g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-220-3 |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 200 |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Power Dissipation | 30W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
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