KSD880YTU
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Краткое описание:
NPN BJT 60V 3A TO-220 Epitaxial Silicon Transistor
Дополнительная информация
NPN Epitaxial Silicon Transistor, designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 3A and a collector-emitter voltage of 60V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 3MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. This RoHS compliant component is supplied in a tube.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.5mm |
| Height | 14.2mm |
| Length | 9.9mm |
| Series | KSD880 |
| Weight | 1.8g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 1MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 30W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 400mV |
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