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NPN BJT Transistor, 3A, 30V VCEO, 90MHz, TO-126
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-126 package. Features a 3A maximum collector current and 30V collector-emitter voltage (VCEO). Offers a transition frequency of 90MHz and a minimum hFE of 60. Designed for through-hole mounting with a power dissipation of 1W. Operating temperature range from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.45mm |
| Height | 11.2mm |
| Length | 8.3mm |
| Weight | 0.761g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 90MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-126 |
| Max Frequency | 1MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 60 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 90MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 90MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 300mV |
