KSE44H11
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NPN BJT Transistor, 80V, 10A, 50MHz, TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor, 1200-BLKBG, designed for through-hole mounting in a TO-220 package. Features a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 50MHz. With a maximum power dissipation of 50W and an operating temperature range of -55°C to 150°C, this RoHS compliant component is suitable for demanding applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.8g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-220 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 200 |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 10A |
| Max Power Dissipation | 50W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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