KSP2222ABU

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KSP2222ABU - Onsemi
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Краткое описание: NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 40V Collector-Emitter Voltage (VCEO) and 600mA maximum collector current. This bipolar junction transistor offers a 300MHz transition frequency and a minimum hFE of 100. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 625mW and is RoHS compliant. Designed for through-hole mounting, this component is supplied in bulk packaging.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.179g
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 300MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 1V