NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 40V Collector-Emitter Voltage (VCEO) and 600mA maximum collector current. This bipolar junction transistor offers a 300MHz transition frequency and a minimum hFE of 100. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 625mW and is RoHS compliant. Designed for through-hole mounting, this component is supplied in bulk packaging.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
3.86mm |
| Height |
4.58mm |
| Length |
4.58mm |
| Weight |
0.179g |
| hFE Min |
100 |
| Polarity |
NPN |
| Frequency |
300MHz |
| Lead Free |
Lead Free |
| Packaging |
Bulk |
| Package/Case |
TO-92 |
| Max Frequency |
300MHz |
| Current Rating |
600mA |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
40V |
| Package Quantity |
1000 |
| Power Dissipation |
625mW |
| Number of Elements |
1 |
| Radiation Hardening |
No |
| Reach SVHC Compliant |
No |
| Transition Frequency |
300MHz |
| Max Breakdown Voltage |
40V |
| Max Collector Current |
600mA |
| Max Power Dissipation |
625mW |
| Gain Bandwidth Product |
300MHz |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Emitter Base Voltage (VEBO) |
6V |
| Collector Base Voltage (VCBO) |
75V |
| Collector-emitter Voltage-Max |
1V |
| Collector Emitter Voltage (VCEO) |
40V |
| Collector Emitter Breakdown Voltage |
45V |
| Collector Emitter Saturation Voltage |
1V |