KSP94BU

Снят с производства
KSP94BU - Onsemi
Увеличить
Краткое описание: PNP BJT Transistor, TO-92, 400V, 300mA, 625mW, Through Hole
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

PNP Epitaxial Silicon Transistor, TO-92 package, featuring a maximum collector-emitter voltage (VCEO) of 400V and a collector base voltage (VCBO) of -400V. This transistor offers a maximum collector current of 300mA and a collector-emitter saturation voltage of -750mV. With a minimum DC current gain (hFE) of 50, it operates across a temperature range of -55°C to 150°C and has a power dissipation of 625mW. Designed for through-hole mounting, this RoHS compliant component is supplied in bulk packaging.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Series KSP94
Weight 0.179g
hFE Min 50
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating -300mA
RoHS Compliant Yes
DC Rated Voltage -400V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 300mA
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -6V
Collector Base Voltage (VCBO) -400V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage -750mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.