LND01K1-G
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Краткое описание:
N-CH MOSFET 9V 0.33A SOT-23 Single Depletion
Дополнительная информация
N-channel depletion mode MOSFET, silicon, 9V drain-source voltage, 0.33A continuous drain current. Features 1400mOhm maximum drain-source resistance at 0V and 46pF typical input capacitance at 5V. Housed in a 5-pin SOT-23 surface-mount plastic package with gull-wing leads, measuring 2.9mm x 1.6mm x 1.15mm. Maximum power dissipation is 360mW with an operating temperature up to 125°C.
| PCB | 5 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MO-178AA |
| EU RoHS | Yes |
| HTS Code | 8542390001 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 60991 |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8542390000 |
| Channel Mode | Depletion |
| Channel Type | N |
| Package/Case | SOT-23 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.6 |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT-23 |
| Package Height (mm) | 1.15 |
| Package Length (mm) | 2.9 |
| Seated Plane Height (mm) | 1.45(Max) |
| Max Operating Temperature | 125°C |
| Maximum Power Dissipation | 360mW |
| Maximum Gate Source Voltage | 0.6V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 9V |
| Maximum Drain Source Resistance | 1400@0VmOhm |
| Typical Input Capacitance @ Vds | 46@5VpF |
| Maximum Continuous Drain Current | 0.33A |
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