LND150K1-G
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Краткое описание:
500V JFET, 13mA, 1kR, N-Channel, SOT-23, SM
Дополнительная информация
N-channel, single-element Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 500V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 13mA. Offers a Drain to Source Resistance (Rds On Max) of 1kΩ and a Gate to Source Voltage (Vgs) of 20V. Packaged in a surface-mount SOT-23 (TO-236AB) case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 1300ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1kR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 10pF |
| Power Dissipation | 360mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 90ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | Unknown |
| Element Configuration | Single |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1kR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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