LND150N8-G
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Краткое описание:
500V N-CH JFET, 30mA ID, 850R Rds(on), SOT-89-3
Дополнительная информация
N-channel Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 500V drain-to-source breakdown voltage and a continuous drain current of 30mA. Offers a low drain-to-source resistance of 850 Ohms and a maximum power dissipation of 1.6W. Packaged in a SOT-89-3 surface-mount configuration, this component operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 90ns and fall time of 450ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001862oz |
| Polarity | N-CHANNEL |
| Fall Time | 450ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1kR |
| Package/Case | SOT-89-3 |
| Package Quantity | 2000 |
| Input Capacitance | 10pF |
| Power Dissipation | 1.2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 90ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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