LND250K1-G
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Краткое описание:
N-CHANNEL JFET, 500V, 13mA, SOT-23-3
Дополнительная информация
The LND250K1-G is a single N-channel JFET with a drain to source breakdown voltage of 500V and a continuous drain current of 13mA. It features a drain to source resistance of 1kΩ and a gate to source voltage of 20V. The device is packaged in a SOT-23-3 package and is rated for operation over a temperature range of -55°C to 150°C. The maximum power dissipation is 360mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.95mm |
| Length | 2.9mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 450ns |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Package Quantity | 3000 |
| Power Dissipation | 360mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 90ns |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1kR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13mA |
| Drain to Source Breakdown Voltage | 500V |
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