LPT 80A
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NPN Phototransistor, 30V VCEO, 850nm, 50mA, Side View, Radial
Дополнительная информация
NPN phototransistor featuring a silicon chip for infrared detection at 850nm. This 2-pin, side-looking component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. Encased in a radial package with a domed lens, it operates within a temperature range of -40°C to 100°C and has a power dissipation of 100mW. Ideal for through-hole mounting, this RoHS compliant device exhibits a 70° viewing angle and a fall time of 10µs.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.54mm |
| Height | 5.84mm |
| Length | 4.57mm |
| Polarity | NPN |
| Fall Time | 10us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 850nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 70° |
| RoHS Compliant | Yes |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 150mV |
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