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Краткое описание:
NPN IR Phototransistor, 30V, 8mA, T-1 Through Hole
Дополнительная информация
NPN phototransistor, IR chip type, with a 2-pin, through-hole T-1 package. Features a 3 mm package diameter, 5.2 mm height, and water-clear domed lens for top-view sensing. Operates from -50°C to 100°C with a maximum collector-emitter voltage of 30V and a maximum light current of 8000µA. Maximum power dissipation is 100mW.
| PCB | 2 |
| ECCN | EAR99 |
| Type | IR Chip |
| HTS Code | 8541407080 |
| Mounting | Through Hole |
| Polarity | NPN |
| Pin Count | 2 |
| Lead Shape | Through Hole |
| Lens Color | Water Clear |
| Schedule B | 8541407080 |
| Package/Case | T-1 |
| RoHS Versions | 2002/95/EC |
| Lens Shape Type | Domed |
| Maximum Fall Time | 5000(Typ)ns |
| Maximum Rise Time | 5000(Typ)ns |
| Basic Package Type | Through Hole |
| Package Description | 3 mm Package |
| Package Family Name | T-1 |
| Package Height (mm) | 5.2 |
| Radiation Hardening | No |
| Viewing Orientation | Top View |
| Maximum Dark Current | 100nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 8000(Min)uA |
| Package Diameter (mm) | 4 |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 100°C |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -50°C |
| Number of Channels per Chip | 1 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.4V |
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