LTR-3208E
Производится
Увеличить
Краткое описание:
NPN Phototransistor, 30V VCEO, 940nm, Radial, Through Hole
Дополнительная информация
NPN phototransistor with a 30V collector-emitter breakdown voltage, designed for infrared detection at 940nm. Features a 20° viewing angle and a domed lens style for efficient light capture. This through-hole component offers a maximum collector current of 3.6mA and a power dissipation of 100mW, operating within a temperature range of -40°C to 85°C. Includes a fall time of 15µs and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Fall Time | 15us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 940nm |
| Orientation | Top View |
| Output Power | 100mW |
| Package/Case | Radial |
| Viewing Angle | 20° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 3.6mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
