LTR-5576D
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Краткое описание:
NPN Phototransistor IR Chip, 3-Pin, Through Hole, 2-Ch
Дополнительная информация
3-pin IR phototransistor with NPN polarity, designed for through-hole mounting. Features a flat lens, side-viewing orientation, and two channels per chip. Operates within a temperature range of -40°C to 85°C, with a maximum collector current of 4.5mA and a maximum light current of 960µA. Maximum emitter-collector voltage is 5V, and maximum collector-emitter voltage is 30V. Exhibits a maximum dark current of 100nA and a maximum power dissipation of 100mW.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | IR Chip |
| EU RoHS | Yes |
| HTS Code | 8541402000 |
| Mounting | Through Hole |
| Polarity | NPN |
| Pin Count | 3 |
| Automotive | No |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Lens Shape Type | Flat |
| Maximum Fall Time | 18000(Typ)ns |
| Maximum Rise Time | 15000(Typ)ns |
| Basic Package Type | Through Hole |
| Package Width (mm) | 3 |
| Package Height (mm) | 5 |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Viewing Orientation | Side View |
| Maximum Dark Current | 100nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 960uA |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 85°C |
| Maximum Collector Current | 4.5mA |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -40°C |
| Number of Channels per Chip | 2 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.4V |
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