M28W640FSB70ZA6F

Снят с производства
M28W640FSB70ZA6F - Micron
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Краткое описание: 64M-bit NOR Flash, 3V/3.3V, 70ns, 4M x 16, 64-Pin TBGA
Производитель Micron
Категория Вспышка
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

64M-bit NOR Flash memory with a parallel interface, featuring a 4M x 16 word organization and 70ns maximum access time. This surface-mount component operates from 3V/3.3V typical supply voltage and supports programming voltages of 2.7-3.6V and 11.4-12.6V. The memory utilizes an asymmetrical, sectored architecture with a boot block located at the bottom. Encased in a 64-pin Thin Profile Ball Grid Array (TBGA) package measuring 13mm x 10mm x 0.85mm (Max), it offers a 22-bit address bus and operates within a temperature range of -40°C to 85°C.
PCB 64
ECCN 3A991.b.1.a
PPAP No
Density 64Mbit
EU RoHS Yes
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 64
Automotive No
Boot Block Yes
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case TBGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Interface Type Parallel
Pin Pitch (mm) 1
Number of Words 4M
Package Material Plastic
Address Bus Width 22bit
Basic Package Type Ball Grid Array
Block Organization Asymmetrical
Package Width (mm) 10
Maximum Access Time 70ns
Package Description Thin Profile Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.85(Max)
Package Length (mm) 13
Programming Voltage 2.7 to 3.6|11.4 to 12.6V
Radiation Hardening No
Location of Boot Block Bottom
Number of Bits per Word 16bit
Seated Plane Height (mm) 0.85(Max)
Max Operating Temperature 85°C
Maximum Operating Current 18mA
Min Operating Temperature -40°C
Typical Operating Supply Voltage 3|3.3V

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