M29W400B120ZA5TR

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M29W400B120ZA5TR - Micron
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Краткое описание: 4M-bit NOR Flash, 3.3V, 120ns, 48-Pin TFBGA, Parallel
Производитель Micron
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

4M bit NOR Flash memory with a parallel interface, offering 512K x 8 or 256K x 16 word organization. Features a 120ns maximum access time and operates from a 2.7 to 3.6V programming voltage, with a typical 3.3V supply. Packaged in a 48-pin Thin Fine Pitch Ball Grid Array (TFBGA) with a 0.8mm pin pitch, this surface-mount component supports an 8/16 bit word width and includes a bottom boot block. Operating temperature range is -20°C to 85°C.
PCB 48
ECCN EAR99
PPAP No
Density 4Mbit
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 48
Automotive No
Boot Block Yes
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case TFBGA
AEC Qualified No
RoHS Versions 2002/95/EC
Interface Type Parallel
Pin Pitch (mm) 0.8
Number of Words 512K/256K
Package Material Plastic
Address Bus Width 19/18bit
Basic Package Type Ball Grid Array
Block Organization Asymmetrical
Package Width (mm) 6
Maximum Access Time 120ns
Package Description Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 1(Max)
Package Length (mm) 9
Programming Voltage 2.7 to 3.6V
Radiation Hardening No
Location of Boot Block Bottom
Number of Bits per Word 8/16bit
Max Operating Temperature 85°C
Maximum Operating Current 10mA
Min Operating Temperature -20°C
Typical Operating Supply Voltage 3.3V

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