M30LW128D110ZA6F

M30LW128D110ZA6F - Micron
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Краткое описание: 128M-bit NOR Flash, Parallel, 3V/3.3V, 110ns, 64-Pin TBGA
Производитель Micron

Дополнительная информация

128M-bit NOR Flash memory with a parallel interface, offering 16M x 8 or 8M x 16 word configurations. Features a 110ns maximum access time and operates from 2.7V to 3.6V programming voltage, with typical supply voltages of 3V or 3.3V. Housed in a 64-pin TBGA package with a 13mm x 10mm footprint and 0.85mm maximum height, this surface-mount component supports 24/23-bit address bus widths and is rated for -40°C to 85°C operation.
PCB 64
ECCN 3A991.b.1.a
PPAP No
Density 128Mbit
EU RoHS Yes
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 64
Automotive No
Boot Block No
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case TBGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Interface Type Parallel
Pin Pitch (mm) 1
Number of Words 16M/8M
Package Material Plastic
Address Bus Width 24/23bit
Basic Package Type Ball Grid Array
Block Organization Symmetrical
Package Width (mm) 10
Maximum Access Time 110ns
Package Description Thin Profile Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.85(Max)
Package Length (mm) 13
Programming Voltage 2.7 to 3.6V
Radiation Hardening No
Number of Bits per Word 8/16bit
Seated Plane Height (mm) 0.85(Max)
Max Operating Temperature 85°C
Maximum Operating Current 20mA
Min Operating Temperature -40°C
Typical Operating Supply Voltage 3|3.3V

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