M470L2923DV0-CB300

Снят с производства
M470L2923DV0-CB300 - Samsung
Краткое описание: DRAM Module 1GB DDR2 200USODIMM 64-bit 333MHz
Производитель Samsung
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

1Gbyte DDR SDRAM 200USODIMM module, featuring 16 x 512M bit chips organized as 128Mx64. This unbuffered small outline dual in line memory module operates at a maximum clock rate of 333 MHz with a 64-bit data bus width and dual ranks. The 200-pin USODIMM package, with a 0.6mm pin pitch, is designed for socket mounting and has a package length of 67.6mm and a maximum width of 3.8mm. It supports a typical operating supply voltage of 2.5V, with a CAS latency of 2.5, and operates within a temperature range of 0°C to 70°C.
PCB 200
ECCN EAR99
PPAP No
EU RoHS Yes
HTS Code 8473301140
Mounting Socket
Cage Code 1542F
Pin Count 200
Automotive No
Lead Shape No Lead
Schedule B 8473300002
CAS Latency 2.5
ECC Support No
Module Type 200USODIMM
Subcategory DDR SDRAM
Chip Density 512Mbit
Organization 128Mx64
Package/Case USODIMM
AEC Qualified No
Main Category DRAM Module
RoHS Versions 2002/95/EC
Total Density 1Gbyte
Data Bus Width 64bit
Pin Pitch (mm) 0.6
Number of Ranks Dual
Chip Package Type 66TSOP-II
Basic Package Type Non-Lead-Frame SMT
Chip Configuration 64Mx8
Maximum Clock Rate 333MHz
Package Width (mm) 3.8(Max)
Maximum Access Time 0.7ns
Package Description Unbuffered Small Outline Dual In Line Memory Module
Package Family Name DIM
Package Height (mm) 31.75
Package Length (mm) 67.6
Max Operating Temperature 70°C
Maximum Operating Current 1560mA
Min Operating Temperature 0°C
Number of Chip per Module 16
Max Operating Supply Voltage 2.7V
Min Operating Supply Voltage 2.3V
Typical Operating Supply Voltage 2.5V

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