M58WR064ET10ZB6T

Снят с производства
M58WR064ET10ZB6T - Micron
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Краткое описание: 64M-bit NOR Flash, 1.8V, 4M x 16, 100ns, 56-Pin VFBGA
Производитель Micron
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

64M-bit NOR Flash memory with a parallel interface, featuring 4M x 16 organization and a 100ns maximum access time. This surface-mount component operates at 1.8V typical supply voltage and supports asymmetrical, sectored architecture with a boot block located at the top. Packaged in a 56-pin VFBGA with a 0.75mm pin pitch, it offers a compact 9mm x 7.7mm x 0.66mm footprint and operates across a -40°C to 85°C temperature range. Programming voltage ranges from 1.65 to 2.2V and 11.4 to 12.6V, with a maximum operating current of 25mA.
PCB 56
ECCN 3A991.b.1.a
PPAP No
Density 64Mbit
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 56
Automotive No
Boot Block Yes
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous|Synchronous
Architecture Sectored
Package/Case VFBGA
AEC Qualified No
RoHS Versions 2002/95/EC
Interface Type Parallel
Pin Pitch (mm) 0.75
Number of Words 4M
Package Material Plastic
Address Bus Width 22bit
Basic Package Type Ball Grid Array
Block Organization Asymmetrical
Package Width (mm) 7.7
Maximum Access Time 100ns
Package Description Very Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.66
Package Length (mm) 9
Programming Voltage 1.65 to 2.2|11.4 to 12.6V
Radiation Hardening No
Location of Boot Block Top
Number of Bits per Word 16bit
Seated Plane Height (mm) 0.66
Max Operating Temperature 85°C
Maximum Operating Current 25mA
Min Operating Temperature -40°C
Typical Operating Supply Voltage 1.8V

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