M59DR008E120ZB6
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Краткое описание:
8M-bit NOR Flash, 1.8V, 120ns, 512Kx16, 48-Pin TFBGA
Дополнительная информация
8M-bit NOR Flash memory with a parallel interface, featuring 512K words x 16 bits. This component operates at a typical 1.8V supply voltage with a maximum access time of 120ns. It is housed in a 48-pin, 7x7mm Thin Fine Pitch Ball Grid Array (TFBGA) package for surface mounting. The memory architecture is sectored and asymmetrical, with a top boot block, and supports a 19-bit address bus. Operating current is a maximum of 20mA, with a temperature range of -40°C to 85°C.
| PCB | 48 |
| ECCN | EAR99 |
| PPAP | No |
| Density | 8Mbit |
| HTS Code | 8542320071 |
| Mounting | Surface Mount |
| Cage Code | 6Y440 |
| Pin Count | 48 |
| Automotive | No |
| Boot Block | Yes |
| Lead Shape | Ball |
| Schedule B | 8542320070 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Package/Case | TFBGA |
| AEC Qualified | No |
| RoHS Versions | 2002/95/EC |
| Interface Type | Parallel |
| Pin Pitch (mm) | 0.8 |
| Number of Words | 512K |
| Package Material | Plastic |
| Address Bus Width | 19bit |
| Basic Package Type | Ball Grid Array |
| Block Organization | Asymmetrical |
| Package Width (mm) | 7 |
| Maximum Access Time | 120ns |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Package Family Name | BGA |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 7 |
| Programming Voltage | 1.65 to 2.2|11.4 to 12.6V |
| Radiation Hardening | No |
| Location of Boot Block | Top |
| Number of Bits per Word | 16bit |
| Seated Plane Height (mm) | 1(Max) |
| Max Operating Temperature | 85°C |
| Maximum Operating Current | 20mA |
| Min Operating Temperature | -40°C |
| Typical Operating Supply Voltage | 1.8V |
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