MB85RS2MTY is a high-temperature resistant Ferroelectric Random Access Memory (FeRAM) chip in a configuration of 262,144 words x 8 bits. It uses a ferroelectric process and silicon gate CMOS technology to form nonvolatile memory cells. Targeted at automotive and high-temperature environments, it features a lifespan of up to 10 trillion read/write cycles and does not require a backup battery for data retention. It operates via a Serial Peripheral Interface (SPI) and offers fast write cycle times compared to Flash or EEPROM.
| RoHS |
Compliant |
| Interface |
SPI |
| Memory Size |
2Mbit |
| Configuration |
262,144 x 8Words x Bits |
| Data Retention |
10Years |
| Supply Voltage |
1.8 to 3.6V |
| Operating Frequency |
40MHz |
| Read/Write Endurance |
10^13Cycles |
| Operating Temperature |
-40 to 125°C |
| Automotive Qualification |
AEC-Q100 Grade 1 Compliant |