The MB85RS64T is a 64 Kbit Ferroelectric Random Access Memory (FRAM) chip in a configuration of 8,192 words x 8 bits, using a ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells. Unlike SRAM, the MB85RS64T is able to retain data without using a data backup battery. The read/write endurance of the ferroelectric memory cells is significantly higher than that of Flash memory or E2PROM, supporting 10 trillion read/write cycles.
| RoHS |
Compliant |
| Interface |
SPI |
| Lead Free |
Yes |
| Memory Size |
64Kbit |
| Data Retention |
10years |
| Supply Voltage |
1.8 to 3.6V |
| Clock Frequency |
33MHz |
| Memory Organization |
8,192 x 8words x bits |
| Read/Write Endurance |
10 Trillioncycles |
| Operating Temperature |
-40 to 85°C |