MBT3904DW1T3G
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Краткое описание:
Dual NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-363-6
Дополнительная информация
Dual NPN Bipolar Transistor in a SOT-363-6 package. Features a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Packaged on a 10000-unit tape and reel, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| hFE Min | 40 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363-6 |
| Max Frequency | 100MHz |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 10000 |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
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