MBT3906DW1T1G
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Dual PNP BJT Transistor, 40V, 200mA, 250MHz, SOT-363
Дополнительная информация
Dual PNP bipolar junction transistor (BJT) in a SOT-363-6 package, offering a collector-emitter voltage (VCEO) of 40V and a continuous collector current of 200mA. Features a minimum DC current gain (hFE) of 60 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-363-6 |
| Max Frequency | 250MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
