MC1413BDR2G

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MC1413BDR2G - Onsemi
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Краткое описание: NPN Darlington Transistor 50V 500mA SOIC
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar junction transistor, surface mount, featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. This device offers a minimum hFE of 1000 and a collector-emitter saturation voltage of 1.6V. Packaged in a 16-pin SOIC, it operates within a temperature range of -40°C to 85°C and is RoHS compliant.
RoHS Compliant
Mount Surface Mount, Through Hole
Width 0.059inch
Height 0.157inch
Length 0.393inch
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOIC
Current Rating 500mA
Output Current 500mA
Output Voltage 50V
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 2500
Number of Elements 7
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 50V
Max Collector Current 500mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.6V

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