MCH6321-TL-E
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Краткое описание:
P-Channel MOSFET, -20V, -4A, 63mR, SMD
Дополнительная информация
Single P-Channel Power MOSFET featuring -20V drain-source breakdown voltage and 4A continuous drain current. Offers low 83mΩ drain-to-source resistance (Rds On) at a 10V gate-source voltage. Designed for surface-mount applications with a compact SC-88FL / MCPH6 package, measuring 2mm x 1.6mm x 0.85mm. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with turn-on delay of 8.1ns and fall time of 39ns.
| RoHS | Compliant |
| Width | 1.6mm |
| Height | 0.85mm |
| Length | 2mm |
| Polarity | P-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 83mR |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 375pF |
| Power Dissipation | 1.5W |
| Turn-On Delay Time | 8.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 63mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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