MJ11032G

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MJ11032G - Onsemi
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Краткое описание: NPN Darlington Transistor 120V 50A 300W TO-204
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar junction transistor (BJT) in a TO-204 package, featuring a 120V collector-emitter breakdown voltage and a continuous collector current rating of 50A. This device offers a maximum power dissipation of 300W and a minimum DC current gain (hFE) of 1000. Operating across a temperature range of -55°C to 200°C, it is RoHS compliant and supplied in tray packaging.
RoHS Compliant
Width 26.67mm
Height 8.51mm
Length 38.86mm
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Tray
Package/Case TO-204-3
Current Rating 50A
RoHS Compliant Yes
DC Rated Voltage 120V
Package Quantity 100
Power Dissipation 300W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 50A
Max Power Dissipation 300W
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 50A
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 3.5V
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 2.5V

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