MJ21194G
Производится
Увеличить
Краткое описание:
NPN BJT 250V 16A 250W TO-3 Power Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) designed for general-purpose applications. Features a maximum collector current of 16A and a collector-emitter breakdown voltage of 250V. Offers a maximum power dissipation of 250W and a transition frequency of 4MHz. Packaged in a TO-204-3 (TO-3) configuration with 3 pins, suitable for tray packaging. Operates within a temperature range of -65°C to 200°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 26.67mm |
| Height | 8.51mm |
| Length | 39.37mm |
| hFE Min | 25 |
| Polarity | NPN |
| Frequency | 4MHz |
| Lead Free | Lead Free |
| Packaging | Tray |
| Package/Case | TO-204-3 |
| Max Frequency | 4MHz |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 100 |
| Power Dissipation | 250W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 4MHz |
| Max Collector Current | 16A |
| Max Power Dissipation | 250W |
| Gain Bandwidth Product | 4MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 400V |
| Collector-emitter Voltage-Max | 4V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1.4V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
