MJ4502G

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MJ4502G - Onsemi
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Краткое описание: PNP BJT 100V 30A 200W TO-204 Power Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 30A and a collector-emitter voltage of 90V. Features a 2MHz transition frequency and a minimum hFE of 25. This through-hole component is housed in a TO-204AA package, offering a maximum power dissipation of 200W and operating temperature range of -65°C to 200°C. It is RoHS compliant and supplied in a tray.
RoHS Compliant
Mount Through Hole
Width 0.335inch
Height 1.05inch
Length 1.55inch
hFE Min 25
Polarity PNP
Frequency 2MHz
Lead Free Lead Free
Packaging Tray
Package/Case TO-204AA
Max Frequency 2MHz
Current Rating 30A
RoHS Compliant Yes
DC Rated Voltage -100V
Package Quantity 100
Power Dissipation 200W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2MHz
Max Collector Current 30A
Max Power Dissipation 200W
Gain Bandwidth Product 2MHz
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 800mV
Collector Emitter Voltage (VCEO) 90V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 800mV

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