MJD117-1G

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MJD117-1G - Onsemi
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Краткое описание: PNP Darlington Power Transistor, 100V, 2A, TO-251
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Darlington Bipolar Power Transistor, DPAK Insertion Mount. Features 100V Collector-Emitter Voltage (VCEO) and 2A Continuous Collector Current. Offers a maximum power dissipation of 1.75W with a transition frequency of 25MHz. Operates within a temperature range of -65°C to 150°C and is RoHS and Halogen Free compliant. Packaged in a TO-251-3 case, 75 units per tube.
RoHS Compliant
Width 2.38mm
Height 6.22mm
Length 6.73mm
Polarity PNP
Lead Free Lead Free
Packaging Rail/Tube
Halogen Free Halogen Free
Package/Case TO-251-3
Current Rating -2A
RoHS Compliant Yes
DC Rated Voltage -100V
Package Quantity 75
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Transition Frequency 25MHz
Max Breakdown Voltage 100V
Max Collector Current 2A
Max Power Dissipation 1.75W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V

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