MJD127T4
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Краткое описание:
PNP BJT 100V 5A TO-252 Power Darlington Transistor
Дополнительная информация
Complementary silicon power Darlington transistors in a TO-252 surface mount package. Features a 100V collector-emitter breakdown voltage and a 5A maximum collector current. Offers a minimum hFE of 100 and a maximum power dissipation of 20W. Operating temperature range is -65°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Weight | 0.063493oz |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-252 |
| Current Rating | -5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 2500 |
| Power Dissipation | 20W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5A |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
