MJD2955T4G

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MJD2955T4G - Onsemi
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Краткое описание: PNP BJT Transistor, 60V, 10A, 2MHz, DPAK
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in DPAK package. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Offers a 2MHz transition frequency and a minimum hFE of 20. Designed for power applications with a maximum power dissipation of 20W. Packaged on a 2500-piece tape and reel.
RoHS Compliant
Width 6.22mm
Height 2.38mm
Length 6.73mm
hFE Min 20
Polarity PNP
Frequency 2MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
Max Frequency 500kHz
Current Rating -10A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 2500
Power Dissipation 1.75W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2MHz
Max Breakdown Voltage 60V
Max Collector Current 10A
Max Power Dissipation 20W
Gain Bandwidth Product 2MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 70V
Collector-emitter Voltage-Max 8V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V

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