MJD32T4G
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PNP BJT Transistor, 40V, 3A, DPAK, 3MHz
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in DPAK package. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current rating of 3A. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.56W. This component is lead-free and RoHS compliant.
| RoHS | Compliant |
| hFE Min | 25 |
| Polarity | PNP |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Max Frequency | 3MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1 |
| Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.56W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
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