MJD44H11T4-A

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MJD44H11T4-A - Stmicroelectronics
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Краткое описание: NPN BJT 80V 8A 20W DPAK Surface Mount Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 80V and a continuous collector current of 8A. This single-element transistor offers a maximum power dissipation of 20000mW and a minimum DC current gain of 60. Housed in a TO-252 DPAK package with gull-wing leads, it operates within a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
Type NPN
Jedec TO-252AA
EU RoHS Yes with Exemption
Category Bipolar Power
Mounting Surface Mount
Cage Code SCR76
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541290080
Package/Case DPAK
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 6.2(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.4(Max)
Package Length (mm) 6.6(Max)
Radiation Hardening No
Minimum DC Current Gain 60@2A@1V|40@4A@1V
Seated Plane Height (mm) 2.63(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 20000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 8A
Maximum Emitter Base Voltage 5V
Maximum Collector-Emitter Voltage 80V

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