MJD45H11T4
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Краткое описание:
PNP BJT Transistor, 80V, -8A, 20W, DPAK, SMT
Дополнительная информация
Complementary power transistors designed for surface mount applications in a DPAK package. Featuring 80V collector-emitter breakdown voltage and a maximum collector current of 8A. These transistors offer a low collector-emitter saturation voltage of 1V and a minimum hFE of 60. Operating temperature range spans from -55°C to 150°C with a power dissipation of 20W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| hFE Min | 60 |
| Polarity | PNP, NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Current Rating | -8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 1 |
| Power Dissipation | 20W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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