MJE13007O

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MJE13007O - KEC Group
Краткое описание: NPN BJT Transistor 400V 8A TO-220AB Through Hole
Производитель KEC Group
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for power applications. Features a 400V collector-emitter voltage and 8A continuous collector current. Operates with a maximum power dissipation of 80W and a minimum DC current gain of 23 at 2A/5V. Housed in a TO-220AB through-hole package with 3 pins and a tab, offering a maximum transition frequency of 4MHz. Suitable for operating temperatures from -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-220AB
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290095
Mounting Through Hole
Cage Code 7916F
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.7(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 8.6(Max)
Package Length (mm) 10.3(Max)
Radiation Hardening No
Minimum DC Current Gain 23@2A@5V
Max Operating Temperature 150°C
Maximum Power Dissipation 80000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 8A
Maximum Emitter Base Voltage 9V
Maximum Transition Frequency 4(Min)MHz
Maximum Collector Base Voltage 700V
Maximum Collector-Emitter Voltage 400V

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