MJE13007R

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MJE13007R - KEC Group
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Краткое описание: NPN BJT 400V 8A TO-220AB Power Transistor
Производитель KEC Group
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220AB package. Features a maximum collector-emitter voltage of 400V and a maximum DC collector current of 8A. Offers a minimum DC current gain of 15 at 2A and 5V, with a maximum transition frequency of 4MHz. Designed for power applications with a maximum power dissipation of 80,000mW and an operating temperature range of -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-220AB
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290095
Mounting Through Hole
Cage Code 7916F
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case TO-220AB
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.7(Max)
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 8.6(Max)
Package Length (mm) 10.3(Max)
Radiation Hardening No
Minimum DC Current Gain 15@2A@5V
Max Operating Temperature 150°C
Maximum Power Dissipation 80000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 8A
Maximum Emitter Base Voltage 9V
Maximum Transition Frequency 4(Min)MHz
Maximum Collector Base Voltage 700V
Maximum Collector-Emitter Voltage 400V

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