MJE15028G
Производится
Увеличить
Краткое описание:
8A 120V NPN BJT Power Transistor TO-220
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features 120V collector-emitter breakdown voltage, 8A continuous collector current, and 50W power dissipation. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 30MHz. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 4.82mm |
| Height | 9.28mm |
| Length | 10.28mm |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 30MHz |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Package Quantity | 50 |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 30MHz |
| Max Collector Current | 8A |
| Max Power Dissipation | 50W |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
