MJE15029G

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MJE15029G - Onsemi
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Краткое описание: PNP BJT 120V 8A 50W TO-220 Power Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-220 package. Features a maximum collector current of 8A and a collector-emitter voltage of 120V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 30MHz. Designed for power applications with a maximum power dissipation of 50W and operating temperatures from -65°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Width 4.82mm
Height 9.28mm
Length 10.28mm
hFE Min 40
Polarity PNP
Frequency 30MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 30MHz
Current Rating -8A
RoHS Compliant Yes
DC Rated Voltage -120V
Package Quantity 50
Power Dissipation 50W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Collector Current 8A
Max Power Dissipation 50W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 500mV

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