MJE15030G

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MJE15030G - Onsemi
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Краткое описание: NPN BJT 150V 8A 50W TO-220 Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) with a 150V collector-emitter voltage and 8A continuous collector current. Features a 50W power dissipation and a transition frequency of 30MHz. Packaged in a TO-220-3 lead standard configuration, this component is RoHS compliant and operates within a temperature range of -65°C to 150°C.
RoHS Compliant
Width 4.82mm
Height 9.28mm
Length 10.28mm
hFE Min 40
Polarity NPN
Frequency 30MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 30MHz
Current Rating 8A
RoHS Compliant Yes
DC Rated Voltage 150V
Package Quantity 50
Power Dissipation 50W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Collector Current 8A
Max Power Dissipation 50W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 150V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 150V
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage 500mV

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