MJE15031G

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MJE15031G - Onsemi
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Краткое описание: PNP BJT Transistor, 150V, 8A, 30MHz, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a 150V collector-emitter voltage (VCEO) and a continuous collector current rating of 8A. Features a maximum power dissipation of 50W and a transition frequency of 30MHz. Packaged in a TO-220-3 configuration, this lead-free component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Width 4.82mm
Height 9.28mm
Length 10.28mm
hFE Min 40
Polarity PNP
Frequency 30MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 30MHz
Current Rating -8A
RoHS Compliant Yes
DC Rated Voltage -150V
Package Quantity 50
Power Dissipation 50W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Collector Current 8A
Max Power Dissipation 50W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 150V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 150V
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage 500mV

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