MJE170G

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MJE170G - Onsemi
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Краткое описание: PNP BJT Transistor, 3A, 40V, 50MHz, TO-225
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and a maximum collector current of 3A. Features a 50MHz transition frequency and a minimum hFE of 50. Packaged in a TO-225-3 case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 12.5W.
RoHS Compliant
hFE Min 50
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-225-3
Max Frequency 50MHz
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 500
Power Dissipation 12.5W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Collector Current 3A
Max Power Dissipation 1.5W
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.7V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.7V

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