MJE171G

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MJE171G - Onsemi
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Краткое описание: PNP BJT Power Transistor, 60V, 3A, 50MHz, TO-225
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP bipolar power transistor featuring a 60V collector-emitter breakdown voltage and a 3A maximum collector current. This component offers a 50MHz transition frequency and a minimum hFE of 50. Packaged in a TO-225-3 case, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 12.5W. The transistor is RoHS compliant and supplied in bulk packaging.
RoHS Compliant
Width 0.118inch
Height 0.437inch
Length 0.307inch
hFE Min 50
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-225-3
Max Frequency 50MHz
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 500
Power Dissipation 12.5W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Collector Current 3A
Max Power Dissipation 1.5W
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 1.7V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.7V

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