MJE243G

Производится
MJE243G - Onsemi
Увеличить
Краткое описание: NPN BJT 100V 4A 15W TO-225 Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-225 package, featuring a 100V collector-emitter voltage (VCEO) and a maximum collector current of 4A. This device offers a power dissipation of 15W and a transition frequency of 40MHz. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Width 0.118inch
Height 0.437inch
Length 0.307inch
hFE Min 40
Polarity NPN
Frequency 40MHz
Lead Free Lead Free
Packaging Bulk
Halogen Free Halogen Free
Package/Case TO-225-3
Max Frequency 40MHz
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 500
Power Dissipation 15W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 40MHz
Max Collector Current 4A
Max Power Dissipation 15W
Gain Bandwidth Product 40MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 600mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.