MJE2955T
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Краткое описание:
PNP BJT Transistor 60V 10A TO-220
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Operates with a 2MHz transition frequency and offers a minimum hFE of 20. Housed in a TO-220 package with through-hole mounting, this RoHS compliant component supports a wide operating temperature range from -55°C to 150°C. Maximum power dissipation is rated at 75W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 20 |
| Polarity | PNP |
| Frequency | 2MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Max Frequency | 2MHz |
| Current Rating | -10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Power Dissipation | 75W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 2MHz |
| Max Collector Current | 10A |
| Max Power Dissipation | 75W |
| Gain Bandwidth Product | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 70V |
| Collector-emitter Voltage-Max | 8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
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