MJE2955TG

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MJE2955TG - Onsemi
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Краткое описание: PNP BJT Power Transistor, 60V, 10A, 75W, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for power applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. Offers a power dissipation of 75W and a transition frequency of 2MHz. Packaged in a TO-220 3-lead standard configuration, supplied in a 50-piece tube. RoHS compliant and lead-free.
RoHS Compliant
Width 4.82mm
Height 9.28mm
Length 10.28mm
Series MJE2955T
hFE Min 20
Polarity PNP
Frequency 2MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 2MHz
Current Rating -10A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 50
Power Dissipation 75W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2MHz
Max Collector Current 10A
Max Power Dissipation 75W
Gain Bandwidth Product 2MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 70V
Collector-emitter Voltage-Max 8V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V

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