MJE3055TG
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Краткое описание:
NPN BJT Transistor, 60V, 10A, 75W, TO-220
Дополнительная информация
NPN bipolar power transistor featuring a 60V collector-emitter breakdown voltage and a 10A maximum collector current. This component offers a 75W power dissipation and a 2MHz transition frequency. Packaged in a TO-220-3 configuration, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 4.82mm |
| Height | 9.28mm |
| Length | 10.28mm |
| hFE Min | 20 |
| Polarity | NPN |
| Frequency | 2MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 2MHz |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Power Dissipation | 75W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 2MHz |
| Max Collector Current | 10A |
| Max Power Dissipation | 75W |
| Gain Bandwidth Product | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 70V |
| Collector-emitter Voltage-Max | 8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
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