MJE340G

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MJE340G - Onsemi
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Краткое описание: NPN BJT 300V 500mA TO-225 Power Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Medium power NPN bipolar junction transistor in a TO-225 package. Features a 300V collector-emitter breakdown voltage and a 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 20W. Operates across a wide temperature range from -65°C to 150°C, with lead-free and RoHS compliance.
RoHS Compliant
Width 2.66mm
Height 11.04mm
Length 7.74mm
hFE Min 30
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-225-3
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 500
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 500mA
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 3V
Collector-emitter Voltage-Max 300V
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V

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