MMBF170-7-F
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N-Channel JFET | 60V | 500mA | 5R | SOT-23 | Surface Mount
Дополнительная информация
N-Channel Silicon Field-Effect Transistor, designed for small signal applications. Features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current of 500mA. Offers a low Drain-to-Source On Resistance (Rds On) of 5 Ohms. This single-element JFET is housed in a compact SOT-23 surface-mount plastic package, ideal for space-constrained designs. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 300mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Nominal Vgs | 2.1V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 40pF |
| Power Dissipation | 300mW |
| Threshold Voltage | 2.1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
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